PART |
Description |
Maker |
DN500F |
NPN Silicon Transistor (Extremely low collector-to-emitter saturation voltage)
|
AUK[AUK corp]
|
DP030 |
-300 mA, PNP silicon transistor Extremely low collector-to-emitter saturation voltage
|
AUK[AUK corp] KODENSHI KOREA CORP.
|
2SB1537 |
Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC.
|
TY Semiconductor Co., Ltd
|
2SD2403 |
High current capacitance. Low collector saturation voltage.Collector-base voltage VCBO 80 V
|
TY Semiconductor Co., Ltd
|
PMF290XN |
N-channel uTrenchmos (tm) extremely low level FET N-channel mTrenchMOS extremely low level FET N-channel mTrenchMOS extremely low level FET
|
http:// PHILIPS[Philips Semiconductors]
|
PMWD20XN |
Dual N-channel microTrenchMOS(tm) extremely low level FET DUAL N-CHANNEL UTRENCHMOS EXTREMELY LOW LEVEL FET
|
NXP Semiconductors Philips Semiconductors
|
2N5088 |
Amplifier transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 35V. Collector dissipation: Pc(max) = 625mW.
|
USHA India LTD
|
2SC5026 |
Silicon NPN Epitaxial Planar Type Low collector-emitter saturation voltage VCE(sat). High collector-emitter voltage (Base open) VCEO
|
TY Semicondutor TY Semiconductor Co., Ltd
|
ASM3P2853A ASM3P2853A_V0.7 ASM3P2853AF-08-ST ASM3P |
Peak EMI Reducing Solution From old datasheet system The el-EMI-nator? Series for Low-Power
|
ALSC[Alliance Semiconductor Corporation]
|